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 2SC5002
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5002 1500 800 6 7(Pulse14) 3.5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25C) 2SC5002 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 4typ 100typ Unit A mA A V
sElectrical Characteristics
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
23.00.3
9.50.2
a b
V V MHz pF
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.8 IB2 (A) -1.6 tstg (s) 4.0max tf (s) 0.2max
1.5
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C - VCE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V) 7
1.5 A
VCE(sat)-IC Characteristics (Typical)
3 (I C: I B= 5 :1)
I C - VBE Temperature Characteristics (Typical)
7 (V CE= 5V)
1. 2A
6 Collector Current I C (A)
700 mA
6
5
2
Collector Current I C( A)
4
400 mA
4
mp)
mp)
e Te
200m A
125C
IB=1 00m A
2
25C (C
2
1
0
0
1
2
3
4
0 0.02
0.1
0.5
1
5
10
0
0
0.5
-30C
(Case
1
(Cas
ase Te
3
Temp)
1.0
3.0
1.5
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
h FE - IC Characteristics (Typical)
(V C E= 5V) 100 20
t stg *tf - I C Characteristics (Typical)
j- a( C/W)
. V C C= 200V . I C : IB1: -IB2 =5 :1: 2 3
j-a - t Characteristics
t s tg *t f ( s)
DC Curr ent Gain h FE
5
Transient Thermal Resistance
50
10
125C
t stg
25 C
1
10 5
-3 0 C
Switching Ti me
1 0.5
tf
0.5
2 0.02
0.05
0.1
0.5
1
5
7
0.1 0.2
0.5
1
5
7
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20
100s
Reverse Bias Safe Operating Area
20 80
P c - T a Derating
10 Co lle ctor Cu rren t I C( A) Collect or Cur ren t I C( A)
Ma ximum Po we r Dissipatio n P C (W)
10 5
60
W ith In fin ite he
5
40
at si nk
1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1%
Without Heatsink Natural Cooling
0.5
20
Without Heatsink 1 100 500 Collector-Emitter Voltage V C E( V) 1000 0.1 50 100 500 1000 2000 3.5 0 0 50 100 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
122


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